N-Channel Enhancement Mode Field Effect Transistor
Description
N-Channel Enhancement Mode Field Effect Transistor FEATURES
40V, 180A, RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
CEP14A04/CEB14A04
D
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
CEP SERIES TO-220
S
ABSOLUTE MAXIM...
