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IRFZ44 Dataheets PDF



Part Number IRFZ44
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFZ44 DatasheetIRFZ44 Datasheet (PDF)

www.vishay.com IRFZ44 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 67 18 25 Single 0.028 FEATURES • Dynamic dV/dt rating • 175 °C operating temperature Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides .

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www.vishay.com IRFZ44 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 67 18 25 Single 0.028 FEATURES • Dynamic dV/dt rating • 175 °C operating temperature Available • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRFZ44PbF IRFZ44PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12) c. ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case e. Current limited by the package, (die current = 51 A) LIMIT 60 ± 20 50 36 200 1.0 100 150 4.5 -55 to +175 300 10 1.1 UNIT V A W/°C mJ W V/ns °C lbf · in N·m S21-1045-Rev. C, 25-Oct-2021 1 Document Number: 91291 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFZ44 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient RthJA Case-to-sink, flat, greased surface RthCS Maximum junction-to-case (drain) RthJC TYP. - 0.50 - MAX. 62 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-sour.


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