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IRFZ44
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
67 18 25 Single
0.028
FEATURES
• Dynamic dV/dt rating • 175 °C operating temperature
Available
• Fast switching • Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
TO-220AB IRFZ44PbF IRFZ44PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VDS
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single pulse avalanche energy b Maximum power dissipation Peak diode recovery dV/dt c
TC = 25 °C
EAS PD dV/dt
Operating junction and storage temperature range Soldering recommendations (peak temperature) d
For 10 s
TJ, Tstg
Mounting torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12) c. ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case e. Current limited by the package, (die current = 51 A)
LIMIT 60 ± 20 50 36 200 1.0 100 150 4.5
-55 to +175 300 10 1.1
UNIT V
A
W/°C mJ W V/ns °C
lbf · in N·m
S21-1045-Rev. C, 25-Oct-2021
1
Document Number: 91291
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFZ44
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
RthJA
Case-to-sink, flat, greased surface
RthCS
Maximum junction-to-case (drain)
RthJC
TYP. -
0.50 -
MAX. 62 1.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-sour.