16N60

SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G D G S TO-220AB (16 N60A ) D S TO-220F (16N60AF) D FEATURES RDS(ON) = 0.17Ω @ VGS = 10V Ultra low gate charge(52.3nC max.) Low reverse transfer capacitance (C RSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G D S TO-3PB (16N60B) D (Drain) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 16 600 0.17 @ V GS = 10V 52.3 G (Gate) S (Source) www.nellsemi.com Page 1 of 10 SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR E AS dv/dt PARAMETER Drain to Source voltage Drain to Gate voltage Gate to Source voltage T C =25°C Continuous Drain Current TEST CONDITIONS T J =25°C to 150°C R GS =20KΩ VALUE 600 600 ±30 16 10.1 48 5.3 UNIT V T C =100°C Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) ...