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FGP20N60UFD

Fairchild Semiconductor

20A Field Stop IGBT

FGP20N60UFD 600V, 20A Field Stop IGBT October 2008 FGP20N60UFD 600V, 20A Field Stop IGBT Features • High current capab...


Fairchild Semiconductor

FGP20N60UFD

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Description
FGP20N60UFD 600V, 20A Field Stop IGBT October 2008 FGP20N60UFD 600V, 20A Field Stop IGBT Features High current capability Low saturation voltage: VCE(sat) =1.8V @ IC = 20A High input impedance Fast switching RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Applications Induction Heating, UPS, SMPS, PFC C G 1 TO-220 E 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25 C @ TC = 100 C o o o Ratings 600 ± 20 40 20 60 165 66 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.76 2.51 62.5 Units o o C /W C /W o C /W ©2008 Fairchild Semiconductor Corporation 1 www.fair...




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