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HY1906P

HOOYI

N-Channel Enhancement Mode MOSFET


Description
HY1906P N-Channel Enhancement Mode MOSFET Features 65V/130A RDS(ON) = 7.5 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D S D Applications G Switching application Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Inform...



HOOYI

HY1906P

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