STB26NM60N

STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω , 20 A MDmesh™ II Power MOSFET 2 2 in D PAK, I PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N ■ ■ ■ TAB TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω ID 3 20 A 20 A 20 A 20 A 20 A TAB 1 2 3 12 3 1 2 TO-220FP I²PAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. 3 1 2 1 3 D²PAK TO-247 Application ■ Internal schematic diagram Switching applications $4!"  Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. ' 3 3# Table 1. Device summary Order codes Marking Package D²PAK TO-220FP 26NM60N I²PAK Tube TO-220 TO-247 Packaging Tape and reel STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N March 2012 This is information on a product in full production. Doc ID 15642 Rev 4 1/23 www.st.com 23 Free Datasheet http://www.Datasheet4U.com Contents STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Contents 1 2 Electrical ratings . . . . . . . . . ....