IRF7665S2TRPBF

DIGITAL AUDIO MOSFET PD - 96239 IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 51 8.3 3.5 m: nC V Features Key parameters optimized for Class-D audio amplifier applications Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower EMI Can deliver up to 100W per channel into 8Ω with no heatsink Š Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide · Lead-Free (Qualified up to 260°C Reflow) · Industrial Qualified VDS RDS(on) typ. @ VGS = 10V Qg typ. RG(int) typ. SB DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SB SC M2 M4 L4 L6 L8 Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF7665S2TR/TR1PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that a...