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K3450-01

Fuji

n-Channel Silicon Power MOSFET

2SK3450-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Av...


Fuji

K3450-01

File DownloadDownload K3450-01 Datasheet


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2SK3450-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 ±13 ±52 ±30 13 216.7 20 5 2.02 225 Operating and storage Tch +150 -55 to +150 temperature range Tstg < *1 L=2.36mH, Vcc=60V See to Avalanche Energy Graph *2 Tch=150°C < DSS, Tch=150°C < *3 IF< =-ID, -di/dt=50A/µs, Vcc=BV Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS /dt dV/dt *3 PD Ta=25°C Tc=25°C Unit V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery t...




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