MT29F4G08ABAEAH4

Micron Confidential and Proprietary 4Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABBEAH4, MT29F4G16ABBEAH4, MT29F4G16ABAEAH4 MT29F4G08ABAEAWP, MT29F4G16ABAEAWP, MT29F4G08ABAEAH4 Features Open NAND Flash Interface (ONFI) 1.0-compliant1 Single-level cell (SLC) technology Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Page size x16: 2160 words (2048 + 112 words) – Block size: 64 pages (256K + 14K bytes) – Plane size: 2 planes x 1024 blocks per plane – Device size: 4Gb: 2048 blocks Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 30ns (1.8V) Array performance – Read page: 25µs – Program page: 200µs (TYP) – Erase block: 2ms (TYP) Command set: ONFI NAND Flash Protocol Advanced command set – Program page cache mode – Read page cache mode – One-time programmable (OTP) mode – Block lock (1.8V only) – Programmable drive strength – Two-plane commands – Multi-die (LUN) operations – Read unique ID – Internal data move Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion WP# signal: Write protect entire device First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management. RESET (FFh) required as first command after power-on Alternate method of device initialization after power up (contact factory) In...