FIR8N60FG

CSD18503KCS www.ti.com SLPS368 – SEPTEMBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503KCS 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 30 4.6 VGS = 4.5V VGS = 10V 1.9 5.4 3.6 UNIT V nC nC mΩ mΩ V 2 ORDERING INFORMATION Device CSD18503KCS Package TO-220 Plastic Package Media Tube Qty 50 Ship Tube APPLICATIONS DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control ABSOLUTE MAXIMUM RATINGS TA = 25°C VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current (Silicon limited), TC = 100°C IDM PD TJ, TSTG EAS Pulsed Drain Current (1) Power Dissipation Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID = 57A, L = 0.1mH, RG = 25Ω VALUE 40 ±20 100 130 83 155 143 –55 to 150 162 A W °C mJ A UNIT V V DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. (1) Pulse duration ≤300μs, duty cycle ≤2% 16 RDS(on) - On-State Resistance (mΩ) 14 12 10 8 6 4 2 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V)...