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HER180

EIC discrete Semiconductors

HIGH EFFICIENT RECTIFIER DIODES

HER180 PRV : 8000 Volts Io : 0.5 Ampere FEATURES : * * * * * * High current capability High surge current capability Hig...


EIC discrete Semiconductors

HER180

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HER180 PRV : 8000 Volts Io : 0.5 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency HIGH EFFICIENT RECTIFIER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 50°C SYMBOL VRRM VRMS VDC IF(AV) VALUE 8000 5600 8000 0.5 UNIT Volts Volts Volts Amp. Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 Amp. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25°C Ta = 100°C IFSM VF IR IR(H) Trr 30 13.6 5.0 50 75 - 40 to + 150 - 40 to + 150 Amps. Volts µA µA ns °C °C Maximum Reverse Recovery Time ( Note 1 ) Junction Temperature Range Storage Temper...




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