Document
IRFI7536GPbF
HEXFET® Power MOSFET
D
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
G S
VDSS RDS(on) typ. max. ID (Silicon Limited)
60V 2.7m: 3.4m: 86A
D
G
D
S
TO-220 Full-Pak G D S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor
Max.
86 73 820 75 0.5 ± 20 -55 to + 175 300 (1.6mm from case) 10lbf in (1.1N m)
Units
A W W/°C V °C
Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
x
x
Avalanche Characteristics
EAS IAR EAR Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy
Ã
d
Thermal Resistance
Symbol
RθJC RθJA
738 See Fig. 14, 15, 22a, 22b
mJ A mJ
Junction-to-Case Junction-to-Ambient (PCB Mount)
ij
Parameter
Typ.
––– –––
Max.
2.87 65
Units
°C/W
1
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IRFI7536GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs RG IDSS IGSS
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Internal Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
60 ––– ––– 2.0 88 ––– ––– ––– ––– ––– ––– 29 2.7 ––– ––– 0.79 ––– ––– ––– –––
Conditions
––– V VGS = 0V, ID = 250µA ––– mV/°C Reference to 25°C, ID = 1.0mA 3.4 mΩ VGS = 10V, ID = 75A 4.0 V VDS = VGS, ID = 150µA ––– S VDS = 25V, ID = 75A ––– Ω 20 µA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C 250 100 nA VGS = 20V -100 VGS = -20V
f
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 130 31 42 88 22 77 55 64 6600 720 400 1080 1400 195 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC
Conditions
ID = 75A VDS = 30V VGS = 10V ID = 75A, VDS =0V, VGS = 10V VDD = 39V ID = 75A RG = 2.7Ω VGS = 10V VGS = 0V VDS = 48V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 48V , See Fig. 11 VGS = 0V, VDS = 0V to 48V
f f
ns
pF
h g
Diode Characteristics
Symbol
IS ISM VSD dv/dt trr Qrr IRRM
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Peak Diode Recovery
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 3.3 43 53 58 65 2.4 86 820 1.3 ––– ––– ––– ––– ––– ––– A A
Conditions
MOSFET symbol showing the integral reverse
G S D
Ãd
Reverse Recovery Time
e
Reverse Recovery Charge Reverse Recovery Current
p-n junction diode. V TJ = 25°C, IS = 75A, VGS = 0V V/ns TJ = 25°C, IS = 75A, VDS = 60V ns TJ = 25°C VR = 51V, TJ = 125°C IF = 75A di/dt = 100A/µs nC TJ = 25°C TJ = 125°C A TJ = 25°C
f
f
Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.26mH, RG = 50 Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD ≤ 75A, di/dt ≤ 890A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as Rθ is measured at TJ approximately 90°C. RθJC value shown is at time zero.
Coss while VDS is rising from 0 to 80% VDSS .
2
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IRFI7536GPbF
1000
TOP VGS 15V 12V 10V 6.0V 5.0V 4.75V 4.50V 4.25V
1000
TOP VGS 15V 12V 10V 6.0V 5.0V 4.75V 4.50V 4.25V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.25V
10
4.25V
10
≤60µs PULSE WIDTH
Tj = 25°C 1 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 0.01 0.1
≤60µs PULSE WIDTH
Tj = 175°C 1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typica.