BV32
NPN Silicon Epitaxial Planar Transistor
High voltage fast switching power transistor
Absolute Maximum Ratings (Ta ...
BV32
NPN Silicon Epitaxial Planar
Transistor
High voltage fast switching power
transistor
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current Total Dissipation Operating Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg
TO-92 Plastic Package Weight approx. 0.19g
Value 700 400 9 1.5 3 0.75 1.5 1.1 150 - 65 to + 150
Unit V V V A A A A W
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 2 V, IC = 0.5 A at VCE = 2 V, IC = 1 A Collector Cutoff Current at VCB = 700 V Emitter Cutoff Current at VEB = 9 V Collector Emitter Breakdown Voltage at IC = 10 mA Collector Emitter Saturation Voltage at IC = 0.5 A, IB = 0.1 A at IC = 1 A, IB = 0.25 A at IC = 1.5 A, IB = 0.5 A Base Emitter Saturation Voltage at IC = 0.5 A, IB = 0.1 A at IC = 1 A, IB = 0.25 A Symbol hFE hFE ICBO IEBO V(BR)CEO Min. 8 5 400 Max. 35 25 1 1 Unit mA mA V
VCEsat
-
0.5 1 3 1 1.2
V
VBEsat
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/09/2006
Free Datasheet http://www.Datasheet4U.com
BV32
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/09/2006
Free Datasheet htt...