FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
February 2012
UniFET-IITM
FDP8N50NZF / FDPF8N50NZF
N-Channel MOSFET
500V, 7A...
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
February 2012
UniFET-IITM
FDP8N50NZF / FDPF8N50NZF
N-Channel MOSFET
500V, 7A, 1Ω Features
RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A Low Gate Charge ( Typ. 14nC) Low Crss ( Typ. 5pF) Fast Switching 100% Avalanche Tested Improve dv/dt Capability ESD Improved Capability RoHS Compliant
Description
This N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G
G D S
TO-220 FDP Series
o
GDS
TO-220F FDPF Series (potted)
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 130 1 -55 to +150 300 7 4.2 28 93 7 13 20 40 0.32 FDP8N50NZF FDPF8N50NZF 500 ±25 7* 4.2* 28* Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temper...
