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2SA1020 Dataheets PDF



Part Number 2SA1020
Manufacturers Secos
Logo Secos
Description PNP Transistor
Datasheet 2SA1020 Datasheet2SA1020 Datasheet (PDF)

2SA1020 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -2A, -50V PNP Plastic Encapsulated Transistor FEATURES  Power amplifier applications N G TO-92MOD H CLASSIFICATION OF hFE(1) Product-Rank Range 2SA1020-O 70-140 2SA1020-Y 120-240  Emitter  Collector  Base M L A J D B K E Collector F C   Base REF. A B C D E F G  Emitter Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1.50 TYP. REF. H J.

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2SA1020 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -2A, -50V PNP Plastic Encapsulated Transistor FEATURES  Power amplifier applications N G TO-92MOD H CLASSIFICATION OF hFE(1) Product-Rank Range 2SA1020-O 70-140 2SA1020-Y 120-240  Emitter  Collector  Base M L A J D B K E Collector F C   Base REF. A B C D E F G  Emitter Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1.50 TYP. REF. H J K L M N Millimeter Min. Max. 1.70 2.05 2.70 3.20 0.85 1.15 1.60 Max 0.00 0.40 4.00 Min ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -50 -50 -5 -2 900 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Ton Ts Tf Min. -50 -50 -5 70 40 - Typ. 100 40 0.1 1 0.1 Max. -1 -1 240 -0.5 -1.2 - Unit V V V μA μA Test Conditions IC= -100μA, IE = 0A IC= -10mA, IB = 0A IE= -100μA, IC = 0A VCB= -50 V, IE = 0 A VEB= -5 V, IC = 0 A VCE= -2V, IC= -0.5A VCE= -2V, IC= -1.5A V V MHz pF μs IC= -1A, IB= -50mA IC= -1A, IB= -50mA VCE = -2V, IC = -500mA VCB = -10V, IE = 0 A, f=1MHz VCC= -30V IB1= -IB2= -0.05A IC= -1A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 1 of 3 Free Datasheet http://www.Datasheet4U.com 2SA1020 Elektronische Bauelemente -2A, -50V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 2 of 3 Free Datasheet http://www.Datasheet4U.com 2SA1020 Elektronische Bauelemente -2A, -50V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 3 of 3 Free Datasheet http://www.Datasheet4U.com .


A1020 2SA1020 2SA1020


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