FQPF6N80C

FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET December 2013 FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A Low Gate Charge (Typ. 21 nC) Low Crss (Typ. 8 pF) 100% Avalanche Tested D GD S TO-220 G D S G TO-220F S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP6N80C FQPF6N80C / FQPF6N80CT 800 5.5 * 3.2 * 22 * ± 30 680 5.5 15.8 4.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C 5.5 3.2 22 Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. (Note 2) (Note 1) (Note 1) (Note 3) 158 1.27 -55 to +150 300 51 0.4...