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B861

Hitachi Semiconductor

2SB861

2SB861 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output comple...


Hitachi Semiconductor

B861

File Download Download B861 Datasheet


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2SB861 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 1 Rating –200 –150 –6 –2 –5 1.8 30 150 –45 to +150 Unit V V V A A W W °C °C Free Datasheet http://www.Datasheet4U.com 2SB861 Electrical Characteristics (Ta = 25°C) Item Symbol Min –150 –6 — 1 Typ — — — — — — — 30 Max — — –1 200 — –3 –1 — Unit V V µA Test conditions I C = –50 mA, RBE = ∞ I E = –5 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –4 V, IC = –50 mA VCE = –10 V, IC = –500 mA*2 Collector to emitter breakdown V(BR)CBO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Collector output capacitance VCE(sat) VBE Cob 60 60 — — — V V pF I C = –500 mA, IB = –50 mA VCE = –4 V, IC = –50 mA VCB = –100 V, IE = 0, f = 1 MHz Notes: 1. The 2SB861 is grouped by hFE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 40 Collector power dissipation Pc (W) –10 30 Collector Current IC (A) –5 –2 –1.0 –...




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