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MG100Q2YS65H

Silicon N-Channel IGBT

Description

MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications Unit: mm · · · High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.) ― ― 2-95A4A Maximum Ratings (Ta = 25°C) Characteristics C...

Toshiba

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MG100Q2YS65H Silicon N-Channel IGBT - Toshiba

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