FMP08N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More co...
FMP08N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Drain(D)
Applications
Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Gate(G) Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 500 500 ±7.5 ±30 ±30 7.5 301.1 3.7 5.9 100 2.02 105 150 -55 to +150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = -30V
Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacita...