2SC2904

2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. PACKAGE STYLE .500 6L FLG C A 2x Ø N FEATURES: Internal Input Matching Network PG = 11.5 dB at 1000 W/30 MHz Omnigold™ Metalization System D FU LL R B G .725/18,42 F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 22 A 50 V 20 V 4.0 V 200 W @ TC = 25 °C -55 °C to +175 °C -55 °C to +175 °C 0.75 °C/W D IM A B C D E F G H I J K L M N K H M IN IM U M inches / m m M L J I M AXIM U M inches / m m .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 Common Emitter configuration CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE* PO ηC IC = 20 mA TC = 25 °C NONETEST CONDITIONS IC = 100 mA IE = 20 mA VCB = 15 V VCB = 3.0 V VCE = 10 V VCE = 12.5 V IC = 1.0 A PIN = 7.0 W f = 30 MHz MINIMUM TYPICAL MAXIMUM 50 20 4.0 5.0 5.0 10 100 55 110 60 180 UNITS V V mA mA --W % NOTE: *Pulse test, PW=150µS. duty=5% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 Free Datasheet http://www.Datasheet4U.com ...