PD - 96229
HEXFET® Power MOSFET plus Schottky Diode
RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Inte...
PD - 96229
HEXFET® Power MOSFET plus
Schottky Diode
RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic
Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ultra Low Package Inductance 42nC 14nC 4.9nC 40nC 29nC 1.8V l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested DirectFET ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
l
IRF6729MPbF IRF6729MTRPbF
Typical values (unless otherwise specified)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6729MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6729MPbF balances industry leading on...