Power MOSFET
PD - 96280
IRF6711SPbF IRF6711STRPbF
l l l l l l l l l
RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Si...
Description
PD - 96280
IRF6711SPbF IRF6711STRPbF
l l l l l l l l l
RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested
Typical values (unless otherwise specified)
DirectFET Power MOSFET RDS(on) Qgs2
1.8nC
VDSS Qg
tot
VGS Qgd
4.4nC
RDS(on) Qoss
9.5nC
25V max ±20V max 3.0mΩ @ 10V 5.2mΩ @ 4.5V
Qrr
21nC
Vgs(th)
1.8V
13nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6711STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching lo...
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