IRF6711STRPBF

PD - 96280 IRF6711SPbF IRF6711STRPbF l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.8nC VDSS Qg tot VGS Qgd 4.4nC RDS(on) Qoss 9.5nC 25V max ±20V max 3.0mΩ @ 10V 5.2mΩ @ 4.5V Qrr 21nC Vgs(th) 1.8V 13nC SQ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) DirectFET™ ISOMETRIC SQ SX ST MQ MX MT MP Description The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6711STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching lo...