IRF6691TRPBF

PD - 97204 PROVISIONAL l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qrr 26nC IRF6691PbF IRF6691TRPbF RDS(on) Vgs(th) 2.0V VDSS tot VGS 20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ 4.5V Qg Qgd 15nC Qgs2 4.4nC Qoss 30nC 47nC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MT DirectFET™ ISOMETRIC Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching loss...