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IRF6637TRPBF Dataheets PDF



Part Number IRF6637TRPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF6637TRPBF DatasheetIRF6637TRPBF Datasheet (PDF)

PD - 97088 DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6637PbF IRF6637TRPbF RDS(on) RDS(on) Qoss 9.9nC Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.0nC 30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V Qgs2 1.0.

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PD - 97088 DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6637PbF IRF6637TRPbF RDS(on) RDS(on) Qoss 9.9nC Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.0nC 30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V Qgs2 1.0nC Qrr 20nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP DirectFET™ ISOMETRIC Description The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6637PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6637PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including R DS(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 25 Typical R DS (on) (mΩ) Max. 30 ±20 14 11 59 110 31 11 VGS, Gate-to-Source Voltage (V) Units V Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current Avalanche Current g e e @ 10V f h 12 10 8 6 4 2 0 0 4 8 ID= 11A A Single Pulse Avalanche Energy Ãg mJ A ID = 14A 20 15 TJ = 125°C 10 TJ = 25°C 5 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0 VDS = 24V VDS= 15V 12 16 20 24 Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. Fig 1. Typical On-Resistance Vs. Gate Voltage QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.52mH, RG = 25Ω, IAS = 11A. www.irf.com 1 Free Datasheet http://www.Datasheet4U.com 5/5/06 IRF6637PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 38 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– 26 5.7 8.2 1.8 -5.4 ––– ––– ––– ––– ––– 11 3.1 1.0 4.0 2.9 5.0 9.9 1.2 12 15 14 3.8 1330 430 150 ––– ––– 7.7 10.8 2.35 ––– 1.0 150 100 -100 ––– 17 ––– ––– 6.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 15V ƒ = 1.0MHz ns nC Ω Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 14A i VGS = 4.5V, ID = 11A i VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 11A VDS = 15V V mΩ V mV/°C µA nA S mV/°C Reference to 25°C, ID = 1mA nC VGS = 4.5V ID = 11A See Fig. 15 VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V i ID = 11A Clamped Inductive Load Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) g ––– ––– ––– ––– 13 20 1.0 20 30 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– 110 Min. ––– Typ. Max. Units ––– 53 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V i TJ = 25°C, IF = 11A di/dt = 500A/µs i Notes: .


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