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IRF6633PBF Dataheets PDF



Part Number IRF6633PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF6633PBF DatasheetIRF6633PBF Datasheet (PDF)

PD - 97083 DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6633PbF IRF6633TRPbF RDS(on) RDS(on) Typical values (unless otherwise specified) VDSS VGS 20V max ±20V max 4.1mΩ @ 10V 7.0mΩ @ 4.5V Qg tot Qgd 4.0nC Qgs2 1.2nC Qr.

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PD - 97083 DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6633PbF IRF6633TRPbF RDS(on) RDS(on) Typical values (unless otherwise specified) VDSS VGS 20V max ±20V max 4.1mΩ @ 10V 7.0mΩ @ 4.5V Qg tot Qgd 4.0nC Qgs2 1.2nC Qrr 32nC Qoss 8.8nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP DirectFET™ ISOMETRIC Description The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6633PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6633PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 20 Typical R DS (on) (mΩ) Max. 20 ±20 16 13 59 132 41 13 VGS, Gate-to-Source Voltage (V) Units V Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current Avalanche Current g e e @ 10V f h 12 10 8 6 4 2 0 0 4 8 ID= 13A A Single Pulse Avalanche Energy Ãg mJ A ID = 16A 15 10 TJ = 125°C 5 TJ = 25°C 0 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0 VDS = 16V VDS= 10V 12 16 20 24 Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. Fig 1. Typical On-Resistance Vs. Gate Voltage QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.51mH, RG = 25Ω, IAS = 13A. www.irf.com 1 Free Datasheet http://www.Datasheet4U.com 5/3/06 IRF6633PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 ––– ––– ––– 1.4 ––– ––– ––– ––– ––– 35 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– 16 4.1 7.0 1.8 -5.2 ––– ––– ––– ––– ––– 11 3.3 1.2 4.0 2.5 5.2 8.8 1.5 9.7 31 12 4.3 1250 630 200 ––– ––– 5.6 9.4 2.2 ––– 1.0 150 100 -100 ––– 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 10V ƒ = 1.0MHz ns nC Ω Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 16A i VGS = 4.5V, ID = 13A i VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 13A VDS = 10V V mΩ V mV/°C µA nA S mV/°C Reference to 25°C, ID = 1mA nC VGS = 4.5V ID = 13A See Fig. 15 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V i ID = 13A Clamped Inductive Load Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current @TC=25°C (Body Diode) Pulsed Source Current (Body Diode) g ––– ––– ––– 0.8 18 32 1.0 27 48 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– 132 Min. ––– Typ. Max. Units ––– 53 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 13A, VGS = 0V i TJ = 25°C, IF = 13A di/dt = 500A/µs i Notes: … Repetitiv.


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