Document
PD - 97083
DirectFET Power MOSFET
RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
IRF6633PbF IRF6633TRPbF
RDS(on) RDS(on)
Typical values (unless otherwise specified)
VDSS
VGS
20V max ±20V max 4.1mΩ @ 10V 7.0mΩ @ 4.5V
Qg
tot
Qgd
4.0nC
Qgs2
1.2nC
Qrr
32nC
Qoss
8.8nC
Vgs(th)
1.8V
11nC
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6633PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6633PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR
20
Typical R DS (on) (mΩ)
Max.
20 ±20 16 13 59 132 41 13
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current Avalanche Current
g
e e @ 10V f h
12 10 8 6 4 2 0 0 4 8 ID= 13A
A
Single Pulse Avalanche Energy
Ãg
mJ A
ID = 16A 15 10 TJ = 125°C 5 TJ = 25°C 0 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0
VDS = 16V VDS= 10V
12
16
20
24
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.51mH, RG = 25Ω, IAS = 13A.
www.irf.com
1
Free Datasheet http://www.Datasheet4U.com
5/3/06
IRF6633PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
20 ––– ––– ––– 1.4 ––– ––– ––– ––– ––– 35 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. Max. Units
––– 16 4.1 7.0 1.8 -5.2 ––– ––– ––– ––– ––– 11 3.3 1.2 4.0 2.5 5.2 8.8 1.5 9.7 31 12 4.3 1250 630 200 ––– ––– 5.6 9.4 2.2 ––– 1.0 150 100 -100 ––– 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 10V ƒ = 1.0MHz ns nC
Ω
Conditions
VGS = 0V, ID = 250µA VGS = 10V, ID = 16A i VGS = 4.5V, ID = 13A i VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 13A VDS = 10V
V mΩ V mV/°C µA nA S
mV/°C Reference to 25°C, ID = 1mA
nC
VGS = 4.5V ID = 13A See Fig. 15 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V i ID = 13A Clamped Inductive Load
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current @TC=25°C (Body Diode) Pulsed Source Current (Body Diode) g ––– ––– ––– 0.8 18 32 1.0 27 48 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– 132
Min.
–––
Typ. Max. Units
––– 53 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 13A, VGS = 0V i TJ = 25°C, IF = 13A di/dt = 500A/µs i
Notes:
Repetitiv.