Document
PD - 97092
IRF6620PbF IRF6620TRPbF
l l l l l l l l l
RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
VDSS
20V
RDS(on) max
2.7mΩ@VGS = 10V 3.6mΩ@VGS = 4.5V
Qg(typ.)
28nC
MX
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST MQ MX MT
DirectFET ISOMETRIC
Description
The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6620PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6620PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C PD @TA = 70°C PD @TA = 25°C EAS IAR TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Power Dissipation Continuous Drain Current, VGS @ 10V
Max.
20 ±20 150 27 22 220 89 1.8
Units
V
k Power Dissipation h Power Dissipation h
e
k @ 10VÃh @ 10V h
A
W mJ A W/°C °C
Single Pulse Avalanche Energy Avalanche Current
Ãg
f
2.8 39 22 0.017 -40 to + 150
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RθJA RθJA RθJA RθJC RθJ-PCB
hl Junction-to-Ambient il Junction-to-Ambient jl Junction-to-Case kl
Junction-to-Ambient
Parameter
Typ.
––– 12.5 20 ––– 1.0
Max.
45 ––– ––– 1.4 –––
Units
°C/W
Junction-to-PCB Mounted
Notes through are on page 2
www.irf.com
1
Free Datasheet http://www.Datasheet4U.com
5/11/06
IRF6620PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
20 ––– ––– ––– 1.55 ––– ––– ––– ––– ––– 110 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. Max. Units
––– 16 2.1 2.8 ––– -5.8 ––– ––– ––– ––– ––– 28 9.5 3.5 8.8 6.2 12 16 18 80 20 6.6 4130 1160 560 ––– ––– 2.7 3.6 2.45 ––– 1.0 150 100 -100 ––– 42 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 10V ƒ = 1.0MHz ns nC nC VDS = 10V VGS = 4.5V ID = 22A See Fig. 15 S nA V mV/°C µA V mΩ
Conditions
VGS = 0V, ID = 250µA VGS = 10V, ID = 27A g VGS = 4.5V, ID = 22A g VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 22A
mV/°C Reference to 25°C, ID = 1mA
VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V g ID = 22A Clamped Inductive Load
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current@ TC=25°C (Body Diode) Pulsed Source Current (Body Diode) e Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
––– ––– ––– ––– –––
Typ. Max. Units
––– ––– 0.8 23 13 110 A 220 1.0 35 20 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25°C, IS = 22A, VGS = 0V g TJ = 25°C, IF = 22A di/dt = 100A/µs g
Notes:
Click on this section to link to the appropriate technical paper. Surface mounted on 1 in. square Cu board. Used double sided cooling, mounting pad. Click on this section to link to the DirectFET Website. Repetitive rating; pulse width limited by max. junctio.