Document
PD - 97087A
IRF6613PbF IRF6613TRPbF
l l l l l l l l l
RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
VDSS
40V
RDS(on) max
3.4mΩ@VGS = 10V 4.1mΩ@VGS = 4.5V
Qg(typ.)
42nC
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT
DirectFET ISOMETRIC
Description
The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C PD @TA = 25°C PD @TA = 70°C EAS IAR TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current Power Dissipation
Max.
40 ±20 150 23 18 180 89 2.8 1.8 200 18 0.022 -40 to + 150
Units
V
k Power Dissipation h Power Dissipation h
e
k Ãh @ 10V h
A
Single Pulse Avalanche Energy Avalanche Current
Ãe
f
W mJ A W/°C °C
Linear Derating Factor
hÃ
Operating Junction and Storage Temperature Range
Thermal Resistance
RθJA RθJA RθJA RθJC RθJ-PCB
hl Junction-to-Ambient il Junction-to-Ambient jl Junction-to-Case kl
Junction-to-Ambient
Parameter
Typ.
––– 12.5 20 ––– 1.0
Max.
45 ––– ––– 1.4 –––
Units
°C/W
Junction-to-PCB Mounted
Notes
through are on page 2
www.irf.com
1
Free Datasheet http://www.Datasheet4U.com
7/3/06
IRF6613PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
40 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 93 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. Max. Units
––– 38 2.6 3.1 ––– -5.8 ––– ––– ––– ––– ––– 42 11.5 3.3 12.6 14.6 15.9 22 18 47 27 4.9 5950 990 460 ––– ––– 3.4 4.1 2.25 ––– 1.0 150 100 -100 ––– 63 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 15V ƒ = 1.0MHz ns nC nC VDS = 20V VGS = 4.5V ID = 18A S nA V mV/°C µA V mΩ
Conditions
VGS = 0V, ID = 250µA VGS = 10V, ID = 23A g VGS = 4.5V, ID = 18A g VDS = VGS, ID = 250µA VDS = 32V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 18A
mV/°C Reference to 25°C, ID = 1mA
See Fig. 6 and 16 VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V g ID = 18A Clamped Inductive Load
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) e Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
––– ––– ––– ––– –––
Typ. Max. Units
––– ––– ––– 38 42 110 A 180 1.0 57 63 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25°C, IS = 18A, VGS = 0V g TJ = 25°C, IF = 18A di/dt = 100A/µs g
Notes:
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.2mH, RG = 25Ω, IAS = 18A.
Pulse width ≤ 400µs; duty cycle ≤ 2%..