MXP6006CT

MXP6006CT Preliminary Datasheet 60V N-Channel MOSFET Applications: z z Power Supply DC-DC Converters VDSS 60 V RDS(ON) (Max) 6.0 mΩ IDa 116 A Features: z z z z LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number MXP6006CT Package TO220 Brand MXP Absolute Maximum Ratings Tc=25℃ unless otherwise specified Symbol VDS IDa IDM EAS TJ and TSTG Parameter Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current @VG=10V Single Pulse Avalanche Energy (L=11.9mH) Operating Junction and Storage Temperature Range (TC=25℃) Value 60 116 463 960 -55 to 175 Units V A mJ ℃ a. Calculated continuous current based upon maximum allowable junction temperature, +175℃. Package limitation current is 80A. OFF Characteristics TJ=25℃ unless otherwise specified Symbol BVDSS IDSS Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min Typ Max Units 60 1 100 100 nA 100 1 Test Conditions VGS=0V, ID=250µA VDS=48V, VGS=0V VDS=48V, VGS=0V TJ=125 ℃ VGS=+20V VGS= -20V MXP6006CT Preliminary Jul 2011 V µA IGSS ©MaxPower Semiconductor Inc. Free Datasheet http://www.Datasheet4U.com ON Characteristics TJ=25℃ unless otherwise specified Symbol RDS(ON) VGS(TH) Parameter Static Drain-to-Source On-Resistance Gate Threshold Voltage Min Typ Max Units 6 mΩ V Test Conditions VGS= 10V, ID=24A VDS=VGS, ...