DRA5124E
Silicon PNP epitaxial planar type
For digital circuits Complementary to DRC5124E DRA2124E in SMini3 type packag...
DRA5124E
Silicon
PNP epitaxial planar type
For digital circuits Complementary to DRC5124E DRA2124E in SMini3 type package Features
Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm
Marking Symbol: LE Packaging
DRA5124E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1: Base 2: Emitter 3: Collector Panasonic JEITA Code
R1 R2
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating –50 –50 –100 150 150 –55 to +150 Unit V V mA mW °C °C
SMini3-F2-B SC-85
C
B
E
Resistance value
R1 R2 Typ
22 22 Max
kΩ kΩ Unit V V
Electrical Characteristics Ta = 25°C±3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Input resistance Resistance ratio Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VI(on) VI(off) R1 R1 / R2 Conditions IC = –10 µA, IE = 0 IC = –2 mA, IB = 0 VCB = –50 V, IE = 0 VCE = –50 V, IB = 0 VEB = –6 V, IC = 0 VCE = –10 V, IC = –5 mA IC = –10 mA, IB = – 0.5 mA VCE = – 0.2 V, IC = –5 mA V...