IRGR3B60KD2

PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 4.2A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.9V D-Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ Tc = 25°C IF @ Tc = 100°C IFM VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 7.8 4.2 15.6 15.6 6.0 3.2 15.6 ±20 52 21 -55 to +150 Units V A c Diode Continous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature Range, for 10 sec. V W PD @ TC = 100°C Maximum Power Dissipation °C 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter RθJC RθJC RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Junction-to-Ambient, (PCB Mount) Weight Min. ––– Typ. ––– ––– ––– 0.3 Max. 2.4 8.8 50 ––– Units °C/W d ––– ––– ––– g ...