IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V ...
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 10A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
G E
E G D-Pak IRGR4610DPbF G D2-Pak IRGS4610DPbF
C
C
C
C
E G
C
E
VCE(on) typ. = 1.7V @ 6A
n-channel
G
TO-220AB IRGB4610DPbF
C
E
Applications Appliance Drives Inverters UPS
Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant
G ate
C ollector
Em itter
→
Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability
Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly
Base part number
Package Type
IRGR4610DPbF
D-PAK
IRGS4610DPbF IRGB4610DPbF
D PAK TO-220AB
2
Standard Pack Form Tube Tape and Reel Tape and Reel Right Tape and Reel Left Tube Tape and Reel Right Tape and Reel Left Tube
Orderable Part Number Quantity 75 2000 3000 3000 50 800 800 50 IRGR4610DPbF IRGR4610DTRPbF IRGR4610DTRRPbF IRGR4610DTRLPbF IRGS4610DPbF IRGS4610DTRRPbF IRGS4610DTRLPbF IRGB4610DPbF
Absolute Maximum Ratings
VCES IC@ T C = 25°C IC@ T C = 100°C ICM ILM IF @ T C = 25°C IF @ T C=100°C IFM VGE PD @ T C =25° PD @ T C =100° TJ T STG Parameter Collector-to-Emitter Breakdown Voltag...
