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IRGP4262D-EPBF Dataheets PDF



Part Number IRGP4262D-EPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP4262D-EPBF DatasheetIRGP4262D-EPBF Datasheet (PDF)

IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 24A Applications • Industrial Motor Drive • UPS G Gate G E C G G n-channel G IRGP4262DPbF TO-247AC C Collector C E C E G IRGP4262D-EPbF TO-247AD E Emitter Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coeffi.

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IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 24A Applications • Industrial Motor Drive • UPS G Gate G E C G G n-channel G IRGP4262DPbF TO-247AC C Collector C E C E G IRGP4262D-EPbF TO-247AD E Emitter Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Base part number IRGP4262DPBF IRGP4262D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V  Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Package Type TO-247AC TO-247AD Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4262DPBF IRGP4262D-EPBF Max. 650 60 40 96 96 45 27 ±20 250 125 -40 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Units V A V W C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA Parameter Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 40 Max. 0.6 1.6 ––– ––– Units °C/W 1 www.irf.com © 2013 International Rectifier June 12, 2013 Free Datasheet http://www.Datasheet4U.com IRGP4262DPbF/IRGP4262D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Min. 650 — Typ. — 0.86 Max. — — Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 2mA (25°C-175°C) — 1.7 — 2.1 Gate Threshold Voltage 5.5 — VGE(th) Threshold Voltage Temperature Coeff. — -20 VGE(th)/TJ gfe Forward Transconductance — 16 — 1.0 Collector-to-Emitter Leakage Current ICES — 530 Gate-to-Emitter Leakage Current — — IGES — 1.6 Diode Forward Voltage Drop VF — 1.26 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Notes:       VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2.1 V IC = 24A, VGE = 15V, TJ = 25°C — IC = 24A, VGE = 15V, TJ = 175°C 7.7 V VCE = VGE, IC = 700µA — mV/°C VCE = VGE, IC = 700µA (25°C-150°C) — S VCE = 50V, IC = 24A, PW = 20µs 35 µA VGE = 0V, VCE = 650V — VGE = 0V, VCE = 650V, TJ = 175°C ±100 nA VGE = ±20V 2.4 V IF = 24A — IF = 24A, TJ = 175°C Max Units Conditions 70 IC = 24A nC VGE = 15V 23 VCC = 400V 30 740 350 µJ IC = 24A, VCC = 400V, VGE=15V 1090 RG = 10, L = 0.40µH, TJ = 25°C 40 Energy losses include tail & diode 45 ns reverse recovery  90 40 — — — — — — — — — — µJ IC = 24A, VCC = 400V, VGE=15V RG = 10, L = 0.40µH, TJ = 175°C Energy losses include tail & diode reverse recovery  VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 96A VCC = 480V, Vp ≤ 650V VGE = +20V to 0V TJ = 150°C,VCC = 400V, Vp ≤ 650V VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 24A VGE = 15V, Rg = 10 Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Min. — — — — — — — — — — — — — — — — — — — — Typ. 47 15 20 520 240 760 24 27 73 23 1120 475 1595 22 28 88 74 1550 124 43 ns pF FULL SQUARE 5.5 — — — — 292 170 17 — — — — µs µJ ns A 2 www.irf.com © 2013 International Rectifier June 12, 2013 Free Datasheet http://www.Datasheet4U.com IRGP4262DPbF/IRGP4262D-EPbF 60 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as spe.


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