IRGP4078DPBF

  IRGP4078DPbF IRGP4078D-EP  C   VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175°C 5 µs short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Ultra-low VF Hyperfast Diode Tight parameter distribution Benefits Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI TJ(MAX) = 175°C VCE(ON) typ. = 1.9V n-channel   G G C G IRGP4078DPbF TO-247AC E C G IRGP4078D-EP TO-247AD E G Gate C Collector E Emitter Base part number IRGP4078DPbF IRGP4078D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube 25 25 Orderable Part Number IRGP4078DPbF IRGP4078D-EPbF Absolute Maximum Ratings Parameter Collector-to-Emitter Voltage VCES IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current Pulse Collector Current, VGE = 15V ICM ILM Clamped Inductive Load Current, VGE = 20V  IF @ TC = 25°C Diode Continuous Forward Current IF @ TC = 100°C Diode Continuous Forward Current IFSM @ TC = 25°C Diode Non Repetitive Peak Surge Current @ TJ = 25°C IFRM @Tc = 100°C Diode ...