IRGP4063D1PbF IRGP4063D1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 48A Applica ons Industrial Motor Drive Inverters UPS Welding
G E C
G
G
n-channel
G Gate
C G IRGP4063D1PbF C Collector
E
C G
E
IRGP4063D1‐EPbF ...