IRG7PH37K10DPbF IRG7PH37K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 15A
G E
C
G
G
n-channel
Applications Industrial Motor Drive UPS G Gate
G IRG7PH37K10DPbF TO‐247AC C Collector
C
E
C
E
G IRG7PH37K10D‐EPbF TO‐24...
