IRG7PH35UD1MPBF

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C VCES = 1200V IC = 25A, TC = 100°C G E TJ(max) = 150°C n-channel VCE(on) typ. = 1.9V @ IC = 20A Benefits Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI G Gate Base part number IRG7PH35UD1MPbF Package Type TO-247AD Standard Pack Form Quantity Tube 25 C GC TO-247AD E C Collector E Emitter Orderable part number IRG7PH35UD1MPbF Absolute Maximum Ratings Parameter V CES V (B R )T r ansient IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IF M V GE P D @ TC = 25°C P D @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Repetitive Transient Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, V GE=15V Max. Units V h 1200 1300 50 dg 25 Clamped Inductive Load Current, VGE=20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current c 15...