PD - 95788B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WSPbF IRG4BC40WLPbF
C
Features
Designed expressly for Switch...
PD - 95788B
INSULATED GATE BIPOLAR
TRANSISTOR
IRG4BC40WSPbF IRG4BC40WLPbF
C
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free
VCES = 600V
G E
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
n-channel
Benefits
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
D2 Pak IRG4BC40WSPbF
TO-262 IRG4BC40WLPbF
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
600 40 20 160 160 ± 20 160 160 65 -55 to + 150 300 (0.063 in. (...