LT10A01

LT10A01–LT10A07 Vishay Lite–On Power Semiconductor 10A Rectifier Features D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 600A peak D Low reverse leakage current D Plastic material – UL Recognition flammability classification 94V–0 14 424 Absolute Maximum Ratings Tj = 25_ C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC DC Bl Blocking ki voltage lt Test Conditions Type LT10A01 LT10A02 LT10A03 LT10A04 LT10A05 LT10A06 LT10A07 Symbol VRRM =VRWM =V VR Value 50 100 200 400 600 800 1000 600 10 –65...+150 Unit V V V V V V V A A °C Peak forward surge current Average forward current TA=50° C Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_ C Parameter Forward voltage Reverse current Diode capacitance Thermal resistance junction to ambient Test Conditions IF=10A TA=25° C TA=100° C VR=4V, f=1MHz Type Symbol VF IR IR CD CD RthJA Min Typ Max 1 10 100 Unit V mA mA pF pF K/W LT10A01–04 LT10A05–07 150 80 10 Rev. A2, 24-Jun-98 1 (4) Downloaded from Elcodis.com electronic components distributor Free Datasheet http://www.Datasheet4U.com LT10A01–LT10A07 Vishay Lite–On Power Semiconductor Characteristics (Tj = 25_ C unless otherwise specified) I FSM– Peak Forward Surge Current ( A ) IFAV – Average Forward Current ( A ) 12 10 8 6 4 2 0 15591 1000 800 600 8.3 ms Single Half–Sine–Wave JEDEC method 400 200 0 1 10 Number of Cycles at 60 Hz 100 0 50 100 15...