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2SA1832

TOPSKY

Plastic-Encapsulate Transistors

Production specification Plastic-Encapsulate Transistors FEATURES z z z z z High voltage and high current Excellent hFE...


TOPSKY

2SA1832

File Download Download 2SA1832 Datasheet


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Production specification Plastic-Encapsulate Transistors FEATURES z z z z z High voltage and high current Excellent hFE linearity High hFE Complementary to 2sc4738 Small package 2SA1832 Pb Lead-free SOT-523 ORDERING INFORMATION Type No. 2SA1832 Marking SO/SY/SG Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC IB PC Tstg Tj Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Base current Collector power dissipation storage temperature range junction temperature Limits -50 -50 -5 -150 -30 100 -55 to +125 125 Unit V V V mA mA mW °C °C SHENZHEN TOPSKY TECHNOLOGY CO.,LTD Rev.A www.szct.com.cn 1 Free Datasheet http://www.Datasheet4U.com Production specification Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS @ Ta=25℃ SYMBOL V(BR)CBO V(BR)CEO V(BR)BEO ICBO IEBO hFE(1) VCE(sat) Cobo fT PARAMETER Collector-base breakown voltage Collector- emitter breakown voltage Emitter-base breakown voltage Collector cut-off current Emitter cut-off current DC current gain collector-emitter saturation voltage Output capacitance transition frequency 2SA1832 unless otherwise specified MIN. -50 -50 -5 -0.1 -0.1 70 -0.1 4 80 400 -0.3 7 V pF MHz μA μA Typ. MAX. UNIT CONDITIONS IC=-100μA,IE=0 IC=-1μA,IB=0 IE=-100μA,IC=0 IE=0,VCB=-50V IC=0,VEB=-5V VCE=-6V,IC=-2mA IC=-100mA,IB=-10mA IE=0,VCB=-10V,f=1MHz IC=-1mA,VCE =-10V, CLASSIFICATION OF hFE(1) Rang 70-140 Marking SO 120-240 SY 200-400 S...




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