N-Channel MOSFET
MDF7N60B N-channel MOSFET 600V
MDF7N60B
N-Channel MOSFET 600V, 7.0A, 1.15Ω
General Description
These N-channel MOSFET ...
Description
MDF7N60B N-channel MOSFET 600V
MDF7N60B
N-Channel MOSFET 600V, 7.0A, 1.15Ω
General Description
These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω
@ Tjmax @ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Jan. 2021. Version 1.5
1
Symbol VDSS
VDSS @ Tjmax VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
Rating 600 660 ±30 7.0* 4.4* 28* 42 0.33 13.1 4.5 220
-55~150
Unit V
V
V A A A W W/ oC mJ V/ns mJ oC
Symbol RθJA RθJC
Rating 62.5 3.01
Unit oC/W
Magnachip Semiconductor Ltd.
MDF7N60B N-channel MOSFET 600V
Ordering Information
Part Number MDF7N60BTH
Temp. Range -55~150oC
Package TO-220F
Packing Tube
RoHS Status Haloge...
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