RFD4N06L, RFD4N06LSM
Data Sheet June 1999 File Number
2837.1
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switchin...
