TIM7785-8SL

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 28.5dBm Single Carrier Level. MICROWAVE POWER GaAs FET TIM7785-8SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 ∆G VDS= 10V IDSset= 2.2A f = 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency ηadd % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 28.5dBm, ∆f= 5MHz (Single Carrier Level) A Channel Temperature Rise ∆Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 150 Ω MIN. 38.5 5.0    -42   TYP. MAX. 39.5  6.0  2.2 2.6  ±0.6 30  -45  2.2 2.6  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V VGSO IGS= -100µA Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  1.8  V -1.0 -2.5 -4.0 A  5.2  V -5 °C/W    2.5 3.8  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other...