RQJ0202VGDQA

Preliminary Datasheet RQJ0202VGDQA Silicon P Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 83 mΩ typ (VGS = –4.5 V, ID = –1.4 A) Low drive current High speed switching 2.5 V gate drive R07DS0291EJ0500 Rev.5.00 Jan 10, 2014 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 G 1. Source 2. Gate 3. Drain S 1 Note: Marking is “VG”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings –20 +8 / –12 –2.7 –8.0 –2.7 0.8 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0291EJ0500 Rev.5.00 Jan 10, 2014 Page 1 of 7 Free Datasheet http://www.Datasheet4U.com RQJ0202VGDQA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS...