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AUIRFI3205 Dataheets PDF



Part Number AUIRFI3205
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet AUIRFI3205 DatasheetAUIRFI3205 Datasheet (PDF)

AUTOMOTIVE GRADE PD - 97764 AUIRFI3205 Features ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 0.008 64A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest pro.

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AUTOMOTIVE GRADE PD - 97764 AUIRFI3205 Features ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 0.008 64A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. D S G TO-220AB Full-Pak AUIRFI3205 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max. 64 45 390 63 0.42 ± 20 480 59 6.3 5.0 -55 to + 175 300 10 lbf in (1.1N m) Units A W W/°C V mJ A mJ V/ns °C ch PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS IAR EAR dv/dt TJ TSTG Avalanche Current Single Pulse Avalanche Energy (Thermally Limited) Repetitive Avalanche Energy e Peak Diode Recovery dv/dt eh Operating Junction and ch dh Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw Thermal Resistance RJC RJA Junction-to-Case y y i Parameter Typ. ––– ––– Max. 2.4 65 Units °C/W Junction-to-Ambient HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 03/14/12 Free Datasheet http://www.Datasheet4U.com AUIRFI3205 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 ––– ––– 2.0 42 ––– ––– ––– ––– ––– ––– 0.057 ––– ––– 0.008 ––– 4.0 ––– ––– ––– 25 ––– 250 ––– 100 ––– -100 V V/°C  V S μA nA Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 34A VDS = VGS, ID = 250μA VDS = 25V, ID = 59A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V f h h Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 100 43 70 4.5 7.5 4000 1300 480 12 170 32 74 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 59A VDS = 44V VGS = 10V, See Fig. 6&13 VDD = 28V ID = 59A RG = 2.5 RD = 0.39 , See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 ƒ = 1.0MHz fh ns fh D G S nH pF h D Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 110 450 64 A 390 1.3 170 680 V ns nC Conditions MOSFET symbol showing the integral reverse G Ù S p-n junction diode. TJ = 25°C, IS = 34A, VGS = 0V TJ = 25°C, IF = 59A di/dt = 100A/μs f fh Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 190µH R G = 25, IAS = 59A. (See Figure 12) ƒ ISD  59A, di/dt  290A/µs, VDD  V(BR)DSS, TJ  175°C „ Pulse width  300µs; duty cycle 2%. … t=60s, ƒ=60Hz † Uses IRF3205 data and test conditions. ‡ R is measured at Tj at approximately 90°C. 2 www.irf.com Free Datasheet http://www.Datasheet4U.c.


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