Document
AUTOMOTIVE GRADE
PD - 97764
AUIRFI3205
Features
● ● ● ● ● ● ● ● ●
Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® Power MOSFET
V(BR)DSS RDS(on) max. ID
55V 0.008 64A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
D S
G
TO-220AB Full-Pak AUIRFI3205
G D S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current
Max.
64 45 390 63 0.42 ± 20 480 59 6.3 5.0 -55 to + 175 300 10 lbf in (1.1N m)
Units
A W W/°C V mJ A mJ V/ns °C
ch
PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS IAR EAR dv/dt TJ TSTG Avalanche Current
Single Pulse Avalanche Energy (Thermally Limited) Repetitive Avalanche Energy e Peak Diode Recovery dv/dt eh Operating Junction and
ch
dh
Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RJC RJA Junction-to-Case
y
y
i
Parameter
Typ.
––– –––
Max.
2.4 65
Units
°C/W
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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1
03/14/12
Free Datasheet http://www.Datasheet4U.com
AUIRFI3205
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55 ––– ––– 2.0 42 ––– ––– ––– ––– ––– ––– 0.057 ––– ––– 0.008 ––– 4.0 ––– ––– ––– 25 ––– 250 ––– 100 ––– -100 V V/°C V S μA nA
Conditions
VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 34A VDS = VGS, ID = 250μA VDS = 25V, ID = 59A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V
f h
h
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 100 43 70 4.5 7.5 4000 1300 480 12 170 32 74 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC
Conditions
ID = 59A VDS = 44V VGS = 10V, See Fig. 6&13 VDD = 28V ID = 59A RG = 2.5 RD = 0.39 , See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 ƒ = 1.0MHz
fh
ns
fh
D G S
nH
pF
h
D
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– 110 450 64 A 390 1.3 170 680 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G
Ã
S p-n junction diode. TJ = 25°C, IS = 34A, VGS = 0V TJ = 25°C, IF = 59A di/dt = 100A/μs
f
fh
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 190µH R G = 25, IAS = 59A. (See Figure 12) ISD 59A, di/dt 290A/µs, VDD V(BR)DSS, TJ 175°C
Pulse width 300µs; duty cycle 2%.
t=60s, =60Hz Uses IRF3205 data and test conditions. R is measured at Tj at approximately 90°C.
2
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