AUIRFI4905

  AUTOMOTIVE GRADE AUIRFI4905 HEXFET® Power MOSFET D Features  Advanced Planar Technology  P-Channel MOSFET  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed an ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base Part Number   AUIRFI4905 Absolute Maximum Ratings   TO-220 Full-Pak Package Type   VDSS RDS(on) max. -55V 20m -39A   G S ID (Silicon Limited) D D G S TO-220 Full-Pak G Gate D Drain S Source Standard Pack Form Quantity Tube 50 Orderable Part Number   AUIRFI4905 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured u...