Document
AUTOMOTIVE GRADE
PD - 96417
AUIRF3007
Features l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
D
V(BR)DSS RDS(on) typ. max ID (Silicon Limited)
75V 10.5mΩ 12.6mΩ 80A 75A
G S
ID (Package Limited)
D
G TO-220AB AUIRF3007
D
S
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current
Max.
80 56 75 320 200 1.3 ± 20 280 946 See Fig. 12a, 12b, 15, 16 -55 to + 175
Units
A
c
PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS EAS EAS (tested) IAR EAR TJ TSTG Single Pulse Avalanche Energy Tested Value Avalanche Current
Single Pulse Avalanche Energy (Thermally Limited)
c
i
d
W W/°C V mJ A mJ °C
Repetitive Avalanche Energy Operating Junction and
h
Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
300 10 lbf in (1.1N m)
Thermal Resistance
RθJC RθCS RθJA Junction-to-Case
y
y
j
Parameter
Typ.
––– 0.50 –––
Max.
0.74 ––– 62
Units
°C/W
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11
Free Datasheet http://www.Datasheet4U.com
AUIRF3007
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leaka.