FDPF320N06L

FDPF320N06L — N-Channel Logic Level PowerTrench® MOSFET December 2013 FDPF320N06L N-Channel Logic Level PowerTrench® MOSFET 60 V, 21 A, 25 mΩ Features RDS(on) = 20 mΩ (Typ.) @ VGS = 10 V, ID = 21 A RDS(on) = 23 mΩ (Typ.) @ VGS = 5 V, ID = 17 A Low Gate Charge (Typ. 23.2 nC) Low Crss (Typ. 64 pF) Fast Switching Speed 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Consumer Appliances LCD/LED/PDP TV D GDS G TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDPF320N06L 60 ±20 21 15 84 66 6.0 26 0.17 -55 to +175 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDPF320N06L 5.8 62.5 Unit V V A A mJ V/ns W W/oC oC oC Unit oC/W ©2011 Fairchild Semiconductor ...