SVF4N65T/F(G)/M_Datasheet
4A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N65T/F(G)/M is an N-channel enhancement mode...
SVF4N65T/F(G)/M_Datasheet
4A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF4N65T SVF4N65F SVF4N65FG SVF4N65M
Package TO-220-3L TO-220F-3L TO-220F-3L TO-251-3L
Marking SVF4N65T SVF4N65F SVF4N65FG SVF4N65M
Material Pb free Pb free Halogen free Pb free
Packing Tube Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.18 Page 1 of 9
SVF4N65T/F(G)/M_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC=25°C) -Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS VGS
ID
IDM
PD
EAS TJ Tstg
SVF4N65T
100 0.80
Ratings SVF4N65F(G)
650 ±30 4.0 2.8...