DatasheetsPDF.com

SVF4N65M Dataheets PDF



Part Number SVF4N65M
Manufacturers SL
Logo SL
Description N-channel MOSFET
Datasheet SVF4N65M DatasheetSVF4N65M Datasheet (PDF)

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widel.

  SVF4N65M   SVF4N65M



Document
SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N65T SVF4N65F SVF4N65FG SVF4N65M Package TO-220-3L TO-220F-3L TO-220F-3L TO-251-3L Marking SVF4N65T SVF4N65F SVF4N65FG SVF4N65M Material Pb free Pb free Halogen free Pb free Packing Tube Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.01.18 Page 1 of 9 SVF4N65T/F(G)/M_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg SVF4N65T 100 0.80 Ratings SVF4N65F(G) 650 ±30 4.0 2.8 16 33 0.26 202 -55~+150 -55~+150 SVF4N65M 77 0.62 Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVF4N65T 1.25 62.5 Ratings SVF4N65F(G) 3.79 120 SVF4N65M 1.62 110 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) Test conditions VGS=0V, ID=250µA VDS=650V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA RDS(on) VGS=10V, ID=2A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=25V,VGS=0V, f=1.0MHZ VDD=325V,ID=4.0A, RG=25Ω (Note 2,3) VDS=520V,ID=4.0A, VGS=10V (Note 2,3) Min. 650 --2.0 Typ. ----- Max. -10 ±100 4.0 Unit V µA nA V -- 2.5 2.7 Ω -- 464 --- 54 --- 1.32 --- 16.6 --- 37.33 --- 18.0 --- 19.2 --- 8.03 --- 2.57 --- 3.03 -- pF ns nC HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.01.18 Page 2 of 9 SVF4N65T/F(G)/M_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Continuous Source Current Pulsed Source Current IS Integral Reverse P-N Junction Di.


SVF4N65FG SVF4N65M SVF4N65MJ


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)