Document
SVF4N65T/F(G)/M_Datasheet
4A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF4N65T SVF4N65F SVF4N65FG SVF4N65M
Package TO-220-3L TO-220F-3L TO-220F-3L TO-251-3L
Marking SVF4N65T SVF4N65F SVF4N65FG SVF4N65M
Material Pb free Pb free Halogen free Pb free
Packing Tube Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.18 Page 1 of 9
SVF4N65T/F(G)/M_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC=25°C) -Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS VGS
ID
IDM
PD
EAS TJ Tstg
SVF4N65T
100 0.80
Ratings SVF4N65F(G)
650 ±30 4.0 2.8 16 33 0.26 202 -55~+150 -55~+150
SVF4N65M
77 0.62
Unit
V V
A
A W W/°C mJ °C °C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol
RθJC RθJA
SVF4N65T 1.25 62.5
Ratings SVF4N65F(G)
3.79 120
SVF4N65M 1.62 110
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Symbol BVDSS IDSS IGSS VGS(th)
Test conditions VGS=0V, ID=250µA VDS=650V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA
RDS(on)
VGS=10V, ID=2A
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
VDS=25V,VGS=0V, f=1.0MHZ
VDD=325V,ID=4.0A, RG=25Ω
(Note 2,3) VDS=520V,ID=4.0A, VGS=10V
(Note 2,3)
Min. 650 --2.0
Typ. -----
Max. -10
±100 4.0
Unit V µA nA V
-- 2.5 2.7 Ω
-- 464 --- 54 --- 1.32 --- 16.6 --- 37.33 --- 18.0 --- 19.2 --- 8.03 --- 2.57 --- 3.03 --
pF ns nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.18 Page 2 of 9
SVF4N65T/F(G)/M_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current Pulsed Source Current
IS Integral Reverse P-N Junction Di.